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 RF2126
2
Typical Applications
* 2.5GHz ISM Band Applications * Digital Communication Systems * PCS Communication Systems * Commercial and Consumer Systems * Portable Battery-Powered Equipment
HIGH POWER LINEAR AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and POS terminals. The part will also function as the final stage in digital PCS phone transmitters requiring linear amplification operating between 1800MHz and 2500MHz. The device is packaged in an 8-lead plastic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. It produces a typical output power level of 1W.
3.90 0.10 -A0.43 0.05 0.05 0.05 Exposed Heat Sink
4.90 0.10 1.27 6.00 0.20 Dimensions in mm. 8 MAX 0 MIN 0.60 0.15 0.22 0.03 1.40 0.10
2.70 0.10
1.70 0.10
NOTES: 1. Shaded lead is pin 1. 2. Lead coplanarity - 0.10 with respect to datum "A".
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
u
Package Style: SOIC-8 Slug
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* Single 3V to 6.5V Supply * 1.3W Output Power * 12dB Gain * 45% Efficiency * Power Down Mode * 1800MHz to 2500MHz Operation
RF IN 1 RF IN 2 PC 3 VCC 4 PACKAGE BASE GND
8 RF OUT 7 RF OUT 6 RF OUT 5 RF OUT
BIAS CIRCUIT
Ordering Information
RF2126 RF2126 PCBA High Power Linear Amplifier Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A5 010207
2-73
RF2126
Absolute Maximum Ratings Parameter
Supply Voltage (VCC) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Operating Ambient Temperature Storage Temperature
Rating
-0.5 to +7.5 -0.5 to +5V 450 +20 20:1 -40 to +85 -40 to +100
Unit
VDC V mA dBm C C
Refer to "Handling of PSOP and PSSOP Products" on page 16-15 for special handling information.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
2
POWER AMPLIFIERS
Parameter
Overall
Frequency Range Maximum Output Power Maximum Output Power Maximum Output Power Total Power Added Efficiency Total Power Added Efficiency Total Power Added Efficiency Small-signal Gain Second Harmonic Third Harmonic
Specification Min. Typ. Max.
Unit
Condition
T=25 C, VCC =6.0V, VPC =3.0V, ZLOAD =12, Pin = 0dBm, Freq=2450MHz, Idle current=180mA
1800 +27.0 +30.0 +29 +31.0 45 45 45 12 -55 -60
2500
MHz dBm dBm dBm % % % dB dBc dBc
VCC =3.6V, PIN =+19dBm VCC =4.8V, PIN =+19dBm VCC =6.0V, PIN =+19dBm Maximum output, VCC =3.6V Maximum output, VCC =4.8V Maximum output, VCC =6.0V See Application Schematic, PIN =+17dBm
Input VSWR
1.5:1
With external matching network; see application schematic dBm dBc dBc dBc 3.5 V V V mA A PEP-3dB POUT =+24dBm for each tone POUT =+24dBm for each tone POUT =+24dBm for each tone To obtain 180mA idle current Threshold voltage at device input
Two-tone Specification
Average Two-Tone Power IM3 IM5 IM7 -24 +27 -25 -35 -55 3.0 0.5
Power Control
VPC Power Control "OFF" 1.5 0.2 3.0 270
Power Supply
Power Supply Voltage Supply Current Power Down Current 350 0.5 6.5 410 10 POUT =+30dBm, VCC =6.0V VPC =0.2V
2-74
Rev A5 010207
RF2126
Pin 1 Function RF IN Description
RF input. This input is DC coupled, so an external blocking capacitor is required if this pin is connected to a DC path. An optimum match to 50 is obtained by providing an external series capacitor of 1.6pF and then a shunt capacitor of 2.0pF; see the Application Schematic. Those values are typical for 2450MHz; other values may be required for other frequencies. Same as pin 1. Power control pin. For obtaining maximum performance the voltage on this pin can be used to set correct bias level. In a typical application this is implemented by a feedback loop. The feedback can be based on the actual supply current of the device, i.e. maintaining a fixed current level, or it can be based on the RF output power level to maintain a fixed RF power level (Automatic Level Control loop). A voltage of 0.5V or lower brings the part into power down state. Power supply pin for the bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is nearby. RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done through a quarter-wavelength microstrip line that is RF grounded at the other end, or through an RF inductor that supports the required DC currents. Optimum load impedance is achieved by providing a shunt capacitor of 1.8pF and a series capacitor of 3.3pF; see the Application Schematic. Those values are typical for 2450MHz; other values may be required for other frequencies. Since there are several output pins available, which are internally connected, one pin can be used for connecting the bias, another for connecting a (third) harmonic trap filter, and the other pins for the RF output. Same as pin 5. Same as pin 5. Same as pin 5. Ground connection. The backside of the package should be connected to the ground plane through a short path, i.e., vias under the device may be required.
Interface Schematic
4 5
VCC RF OUT
6 7 8 Pkg Base
RF OUT RF OUT RF OUT GND
Rev A5 010207
2-75
POWER AMPLIFIERS
2 3
RF IN PC
2
RF2126
Application Schematic 2450MHz Operation
1.6 pF RF IN
2
POWER AMPLIFIERS
1 2.0 pF 2 VPD 3 1000 pF 4 PACKAGE BASE BIAS CIRCUIT
8 3.3 pF 7 1.8 pF 6 5 4.7 nH RF OUT
VCC 1000 pF
33 pF
Evaluation Board Schematic 2450 MHz Operation
(Download Bill of Materials from www.rfmd.com.)
P1 P1-1 1 2 P1-3 RF IN J1 50 strip 2.0 pF C1 VPC 1000 pF C6 3 4 PACKAGE BASE BIAS CIRCUIT 6 5 4.7 nH L1 33 pF C5 1.6 pF C2 1 2 8 7 1.8 pF C3 3.3 pF C4 RF OUT 50 strip J2 3 VCC GND VPC
VCC 1 uF C8 1000 pF C7
2-76
Rev A5 010207
RF2126
Evaluation Board Layout 1.5" x 1.0"
Board Thickness 0.031", Board Material FR-4
2
POWER AMPLIFIERS
Rev A5 010207
2-77
RF2126
2
POWER AMPLIFIERS
2-78
Rev A5 010207


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